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GaN Single crystal substrate<\/h2>\r\n\t\t\t\t\t

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Type\/Dopant<\/th>Size<\/th>Surface Polished<\/th>Other Specs<\/th>\r\n\t\t\t\t\t\t\t\t<\/tr>\r\n\t\t\t\t\t\t\t\t<\/thead>\r\n\t\t\t\t\t\t\t\t
N-type\/undoped<\/b><\/td>SSP\/DSP<\/span><\/td>Surface: Ga face CMP\/N face
Orientation:<0001> \/-0.5degree
Useable surface area: > 90%
Orientation flat: <1-100> \/-1.0degree
Secondary orientation flat: <11-20> \/-3.0degree
TTV: <= 15 um
BOW: <= 20 um
Resistivity: < 0.5 ohm-cm
Dislocation density: less than 5x10E5 cm-2
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SEMI=insulating<\/b><\/td>SSP\/DSP<\/span><\/td>Surface: Ga face CMP\/N face
Orientation:<0001> \/-0.5degree
Useable surface area: > 90%
Orientation flat: <1-100> \/-1.0degree
Secondary orientation flat: <11-20> \/-3.0degree
TTV: <= 15 um
BOW: <= 20 um
Resistivity: >10E6 ohm-cm
Dislocation density: less than 5x10E5 cm-2
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N-type\/undoped<\/b><\/td>SSP<\/span><\/td>Orientation:<11-20> \/-1.0degree
Useable surface area: > 90%
TTV: <= 15 um
BOW: <= 20 um
Resistivity: < 0.5 ohm-cm
Dislocation density: less than 5x10E5 cm-2
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N-type\/undoped<\/b><\/td>SSP<\/span><\/td>Orientation:<10-10> \/-1.0degree
Useable surface area: > 90%
TTV: <= 15 um
BOW: <= 20 um
Resistivity: < 0.5 ohm-cm
Dislocation density: less than 5x10E5 cm-2<\/td><\/tr>\r\n\t\t\t\t\t\t\t\t<\/tbody>\r\n\t\t\t\t\t\t\t<\/table>\r\n\t\t\t\t\t\t\r\n\t\t\t\t\t
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