{"Content":"\r\n\t\t\t\t
<\/p>\r\n\t\t\t\t\t\t\t
| Type\/Dopant<\/th> | More specs<\/th> | GaN film thickness<\/th>\r\n\t\t\t\t\t\t\t\t<\/tr>\r\n\t\t\t\t\t\t\t\t<\/thead>\r\n\t\t\t\t\t\t\t\t | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| N-type\/undoped<\/b><\/td> | Orientation:<0001> \/-0.5degree Diameter: 50.8 \/-0.1mm Dislocation density: less than 5x10E8cm-2 Useable surface area: > 90% Surface: SSP\/DSP Resistivity: < 0.5 ohm-cm<\/td> | 4um~30 um<\/span><\/td><\/tr>| N-type\/Si<\/b><\/td> | Orientation:<0001> \/-0.5degree | Diameter: 50.8 \/-0.1mm Dislocation density: less than 5x10E8cm-2 Useable surface area: > 90% Surface: SSP\/DSP Resistivity: < 0.05 ohm-cm<\/td> 4um~30 um<\/span><\/td><\/tr> | P-type\/Mg<\/b><\/td> | Orientation:<0001> \/-0.5degree | Diameter: 50.8 \/-0.1mm Dislocation density: less than 5x10E8cm-2 Useable surface area: > 90% Surface: SSP\/DSP Resistivity: ~ 10 ohm-cm<\/td> 4um<\/span><\/td><\/tr> | N-type\/undoped<\/b><\/td> | Orientation:<0001> \/-0.5degree | Diameter: 100 \/-0.1mm Dislocation density: less than 5x10E8cm-2 Useable surface area: > 90% Surface: SSP\/DSP Resistivity: < 0.5 ohm-cm<\/td> 4um~30 um<\/span><\/td><\/tr>\r\n\t\t\t\t\t\t\t\t<\/tbody>\r\n\t\t\t\t\t\t\t<\/table>\r\n\t\t\t\t\t\t\r\n\t\t\t\t\t | \r\n\t\t\t\t\t\t |